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Other articles related with "band alignment"：
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87801 |
Chun-Yan Zhao(赵春艳), Sha-Sha Li(李莎莎), and Yong Yan(闫勇) |
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Anomalous photoluminescence enhancement and resonance charge transfer in type-II 2D lateral heterostructures |
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Chin. Phys. B
2023 Vol.32 (8): 87801-087801
[Abstract]
(151)
[HTML 1 KB]
[PDF 1802 KB]
(57)
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56803 |
Da Huo(霍达), Yusong Bai(白玉松), Xiaoyu Lin(林笑宇), Jinghao Deng(邓京昊), Zemin Pan(潘泽敏), Chao Zhu(朱超), Chuansheng Liu(刘传胜), and Chendong Zhang(张晨栋) |
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Visualizing interface states in In2Se3–WSe2 monolayer lateral heterostructures |
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Chin. Phys. B
2023 Vol.32 (5): 56803-056803
[Abstract]
(286)
[HTML 1 KB]
[PDF 1539 KB]
(284)
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88104 |
Qi-Liang Wang(王启亮), Shi-Yang Fu(付诗洋), Si-Han He(何思翰), Hai-Bo Zhang(张海波),Shao-Heng Cheng(成绍恒), Liu-An Li(李柳暗), and Hong-Dong Li(李红东) |
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Determination of band alignment between GaOx and boron doped diamond for a selective-area-doped termination structure |
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Chin. Phys. B
2022 Vol.31 (8): 88104-088104
[Abstract]
(363)
[HTML 0 KB]
[PDF 1217 KB]
(58)
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47102 |
Da-Hua Ren(任达华), Qiang Li(李强), Kai Qian(钱楷), and Xing-Yi Tan(谭兴毅) |
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Tunable electronic properties of GaS-SnS2 heterostructure by strain and electric field |
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Chin. Phys. B
2022 Vol.31 (4): 47102-047102
[Abstract]
(321)
[HTML 0 KB]
[PDF 1611 KB]
(38)
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114211 |
Xia Wang(王霞), Wei-Fang Gu(古卫芳), Yong-Feng Qiao(乔永凤), Zhi-Yong Feng(冯志永), Yue-Hua An(安跃华), Shao-Hui Zhang(张少辉), and Zeng Liu(刘增) |
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Band offsets and electronic properties of the Ga2O3/FTO heterojunction via transfer of free-standing Ga2O3 onto FTO/glass |
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Chin. Phys. B
2021 Vol.30 (11): 114211-114211
[Abstract]
(349)
[HTML 0 KB]
[PDF 1062 KB]
(74)
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97507 |
Jimin Shang(商继敏), Shuai Qiao(乔帅), Jingzhi Fang(房景治), Hongyu Wen(文宏玉), and Zhongming Wei(魏钟鸣) |
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Strain drived band aligment transition of the ferromagnetic VS2/C3N van der Waals heterostructure |
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Chin. Phys. B
2021 Vol.30 (9): 97507-097507
[Abstract]
(430)
[HTML 1 KB]
[PDF 3542 KB]
(331)
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77304 |
Yancai Xu(徐彦彩), Rong Zhou(周荣), Qin Yin(尹钦), Jiao Li(李娇), Guoxiang Si(佀国翔), and Hongbin Zhang(张洪宾) |
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High-performance self-powered photodetector based on organic/inorganic hybrid van der Waals heterojunction of rubrene/silicon |
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Chin. Phys. B
2021 Vol.30 (7): 77304-077304
[Abstract]
(354)
[HTML 1 KB]
[PDF 2412 KB]
(146)
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67701 |
Ji-Yao Du(都继瑶), Ji-Yu Zhou(周继禹), Xiao-Bo Li(李小波), Tao-Fei Pu(蒲涛飞), Liu-An Li(李柳暗), Xin-Zhi Liu(刘新智), and Jin-Ping Ao(敖金平) |
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Band alignment between NiOx and nonpolar/semipolar GaN planes for selective-area-doped termination structure |
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Chin. Phys. B
2021 Vol.30 (6): 67701-067701
[Abstract]
(369)
[HTML 0 KB]
[PDF 847 KB]
(84)
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17802 |
Guangze Lu(陆光泽), Zunren Lv(吕尊仁), Zhongkai Zhang(张中恺), Xiaoguang Yang(杨晓光), and Tao Yang(杨涛) |
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Effect of Sb composition on the band alignment of InAs/GaAsSb quantum dots |
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Chin. Phys. B
2021 Vol.30 (1): 17802-
[Abstract]
(445)
[HTML 1 KB]
[PDF 658 KB]
(77)
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97303 |
Chang Rao(饶畅), Zeyuan Fei(费泽元), Weiqu Chen(陈伟驱), Zimin Chen(陈梓敏), Xing Lu(卢星), Gang Wang(王钢), Xinzhong Wang(王新中), Jun Liang(梁军), Yanli Pei(裴艳丽) |
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Band alignment of p-type oxide/ε-Ga2O3 heterojunctions investigated by x-ray photoelectron spectroscopy |
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Chin. Phys. B
2020 Vol.29 (9): 97303-097303
[Abstract]
(518)
[HTML 0 KB]
[PDF 644 KB]
(143)
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48801 |
Zhen-Wu Jiang(姜振武), Shou-Shuai Gao(高守帅), Si-Yu Wang(王思宇), Dong-Xiao Wang(王东潇), Peng Gao(高鹏), Qiang Sun(孙强), Zhi-Qiang Zhou(周志强), Wei Liu(刘玮), Yun Sun(孙云), Yi Zhang(张毅) |
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Insight into band alignment of Zn(O,S)/CZTSe solar cell by simulation |
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Chin. Phys. B
2019 Vol.28 (4): 48801-048801
[Abstract]
(702)
[HTML 1 KB]
[PDF 526 KB]
(204)
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38103 |
Jia Ren-Xu (贾仁需), Dong Lin-Peng (董林鹏), Niu Ying-Xi (钮应喜), Li Cheng-Zhan (李诚瞻), Song Qing-Wen (宋庆文), Tang Xiao-Yan (汤晓燕), Yang Fei (杨霏), Zhang Yu-Ming (张玉明) |
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Energy-band alignment of atomic layer deposited (HfO2)x(Al2O3)1-x gate dielectrics on 4H-SiC |
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Chin. Phys. B
2015 Vol.24 (3): 38103-038103
[Abstract]
(742)
[HTML 0 KB]
[PDF 347 KB]
(391)
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117702 |
Han Kai (韩锴), Wang Xiao-Lei (王晓磊), Xu Yong-Gui (徐永贵), Yang Hong (杨红), Wang Wen-Wu (王文武) |
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Analysis of flatband voltage shift of metal/high-k/SiO2/Si stack based on energy band alignment of entire gate stack |
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Chin. Phys. B
2014 Vol.23 (11): 117702-117702
[Abstract]
(471)
[HTML 1 KB]
[PDF 435 KB]
(423)
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77104 |
Ö L Ünsal, B Gönül, M Temiz |
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A theoretical investigation of the band alignment of type-I direct band gap dilute nitride phosphide alloy of GaNxAsyP1-x-y/GaP quantum wells on GaP substrates |
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Chin. Phys. B
2014 Vol.23 (7): 77104-077104
[Abstract]
(592)
[HTML 1 KB]
[PDF 259 KB]
(395)
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17702 |
Chen Feng (陈峰), Wu Wen-Bin (吴文彬), Li Shun-Yi (李舜怡), Andreas Klein |
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Energy band alignment at ferroelectric/electrode interface determined by photoelectron spectroscopy |
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Chin. Phys. B
2014 Vol.23 (1): 17702-017702
[Abstract]
(480)
[HTML 1 KB]
[PDF 3124 KB]
(1709)
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87702 |
Fan Ji-Bin (樊继斌), Liu Hong-Xia (刘红侠), Gao Bo (高博), Ma Fei (马飞), Zhuo Qing-Qing (卓青青), Hao Yue (郝跃) |
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Influence of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition |
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Chin. Phys. B
2012 Vol.21 (8): 87702-087702
[Abstract]
(1422)
[HTML 1 KB]
[PDF 1451 KB]
(1133)
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116101 |
Chang Shao-Hui(常少辉), Chen Zhi-Zhan(陈之战), Huang Wei(黄维), Liu Xue-Chao(刘学超), Chen Bo-Yuan(陈博源), Li Zheng-Zheng(李铮铮), and Shi Er-Wei(施尔畏) |
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Band alignment of Ga2O3/6H-SiC heterojunction |
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Chin. Phys. B
2011 Vol.20 (11): 116101-116101
[Abstract]
(1387)
[HTML 0 KB]
[PDF 650 KB]
(942)
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